PHI nanoTof 3 MS/MS

The time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) provides elemental, chemical state, and molecular information from surfaces of solid materials. The average depth of analysis for a TOF-SIMS measurement is approximately 1 nm. Physical Electronics TOF-SIMS instruments provide an ultimate spatial resolution of less than 0.1 µm. Spatial distribution information is obtained by scanning a micro focused ion beam across the sample surface. Depth distribution information is obtained by combining TOF-SIMS measurements with ion milling (sputtering) to characterize a thin film structure. In addition, our TOF-SIMS instrument provides a unique 3D analysis capability that combines in-situ focused ion beam sectioning with high mass resolution and high spatial resolution imaging (HR2) to provide 3D chemical characterization. The information TOF-SIMS provides about surface layers or thin film structures is important for many industrial and research applications where surface or thin film composition plays a critical role in material performance: nanomaterials, photovoltaics, polymer surface modification, catalysis, corrosion, adhesion, semiconductor devices and packaging, magnetic media, display technology, thin film coatings, and medical materials used for numerous applications.

Location: Long Pocket, Foxtail building, room 221

Contact: Andrew Kostryzhev, a.kostryzhev@uq.edu.au